番号 |
日本語原文 |
NMT訳(NICT特許NT) |
PostEditPro訳 |
1 |
検査装置は、X線などの放射線で検査対象を照射する放射線源と、対象物を透過した放射線を検出するように構成された検出器とを備える。 |
The examination apparatus comprises a radiation source for irradiating an examination object with radiation, such as X-rays, and a detector configured to detect the radiation transmitted through the object. |
The inspection apparatus comprises a radiation source for irradiating a test object with radiation, such as X-rays, and a detector configured to detect the radiation transmitted through the object. |
2 |
この方法は、トモグラフィック再構成のための投影データを取得するために、複数の角度からX線などの放射線で検査対象を照射することを含む。 |
The method comprises irradiating an examination object with radiation, such as X-rays, from a plurality of angles in order to acquire projection data for tomographic reconstruction. |
This method comprises irradiating a test object with radiation, such as X-rays, from multiple angles to acquire projection data for tomographic reconstruction. |
3 |
X線などの放射線で検査対象を照射することにより、外部からは見えない内部欠陥を効果的に検出することができる。 |
By irradiating the inspection target with radiation such as X-rays, internal defects that cannot be seen from the outside can be effectively detected. |
By irradiating the test object with radiation such as X-rays, internal defects that cannot be seen from the outside can be effectively detected. |
4 |
本発明は、安定した温度環境を維持しながらX線などの放射線で検査対象を照射することが可能な非破壊検査システムに関する。 |
The present invention relates to a non-destructive inspection system capable of irradiating an inspection target with radiation such as X-rays while maintaining a stable temperature environment. |
The present invention relates to a non-destructive inspection system capable of irradiating a test object with radiation such as X-rays while maintaining a stable temperature environment. |
5 |
放射線Rのエネルギーに応じてサンプルへの浸透深さが変化し、対象材料の多層検査が可能になる。 |
Depending on the energy of the radiation R, the penetration depth into the sample varies, allowing multilayer inspection of the material in question. |
Depending on the energy of radiation R, the penetration depth into the sample varies, enabling multilayer inspection of the target material. |
6 |
センサーアレイの検出効率は放射線Rのエネルギーに応じて変化するため、正確な測定のための校正手順が必要となる。 |
Since the detection efficiency of the sensor array varies depending on the energy of the radiation R, a calibration procedure is required for accurate measurement. |
Since the detection efficiency of the sensor array varies depending on the energy of the radiation R, a calibration procedure is required for accurate measurement. |
7 |
デュアルエネルギーイメージング技術で使用される放射線Rのエネルギーに応じて、検査対象内の異なる材料成分を識別することができる。 |
Depending on the energy of the radiation R used in the dual-energy imaging technique, different material components in the examination object can be identified. |
Depending on the energy of the radiation R used in the dual-energy imaging technique, different material components in the examination object can be identified. |
8 |
取得した画像のコントラスト分解能は放射線Rのエネルギーに応じて変化する可能性があり、特定の検査要件に従って最適化することができる。 |
The contrast resolution of the acquired image may vary depending on the energy of the radiation R and may be optimized according to the specific examination requirements. |
The contrast resolution of the acquired image may vary depending on the energy of the radiation R and can be optimized according to specific examination requirements. |
9 |
本発明に係る画像システムは、X線源、検出器アレイ、および取得した画像のコントラストを向上させるための画像処理回路を備える。 |
An imaging system in accordance with the present invention includes an x-ray source, a detector array, and image processing circuitry for enhancing the contrast of an acquired image. |
The imaging system according to the present invention comprises an X-ray source, a detector array, and image processing circuitry for enhancing the contrast of acquired images. |
10 |
制御ユニットは、検査対象の厚さと密度に基づいて画像システムの露出パラメータを自動的に調整する。 |
The control unit automatically adjusts the exposure parameters of the imaging system based on the thickness and density of the inspected object. |
The control unit automatically adjusts the exposure parameters of the imaging system based on the thickness and density of the examination object. |
11 |
画像システムの一実施形態は、放射線源の連続動作中の過熱を防止するための冷却機構を含む。 |
One embodiment of the imaging system includes a cooling mechanism to prevent overheating during continuous operation of the radiation source. |
One embodiment of the imaging system includes a cooling mechanism to prevent overheating during continuous operation of the radiation source. |
12 |
画像システムの空間分解能は、焦点スポットサイズと幾何学的拡大率を調整することによって最適化することができる。 |
The spatial resolution of the imaging system can be optimized by adjusting the focal spot size and the geometric magnification. |
The spatial resolution of the imaging system can be optimized by adjusting the focal spot size and the geometric magnification. |
13 |
撮影の座標系は、三つの直交軸によって定義され、そのz軸は放射線源の中心ビーム方向に対応する。 |
The coordinate system of the imaging is defined by three orthogonal axes, the z-axis corresponding to the central beam direction of the radiation source. |
The imaging coordinate system is defined by three orthogonal axes, with the z-axis corresponding to the central beam direction of the radiation source. |
14 |
取得した投影画像の正確な幾何学的補正を可能にするために、校正マーカーが撮影の座標系内の既知の位置に配置される。 |
In order to enable an accurate geometric correction of the acquired projection images, calibration markers are arranged at known positions in the coordinate system of the imaging. |
To enable accurate geometric correction of the acquired projection images, calibration markers are placed at known positions in the imaging coordinate system. |
15 |
この方法は、システム校正中に決定された変換行列を用いて、検出された欠陥座標を検出器の基準フレームから撮影の座標系に変換することを含む。 |
The method includes transforming the detected defect coordinates from the detector reference frame to the imaging coordinate system using a transformation matrix determined during system calibration. |
This method includes transforming the detected defect coordinates from the detector reference frame to the imaging coordinate system using a transformation matrix determined during system calibration. |
16 |
本発明は、スキャン処理中にリアルタイムで検査対象と撮影の座標系との位置関係を決定するための装置を提供する。 |
The present invention provides an apparatus for determining a positional relationship between an inspection object and a coordinate system of imaging in real time during a scanning process. |
The present invention provides an apparatus for determining a positional relationship between an inspection object and a coordinate system of imaging in real time during a scanning process. |
17 |
撮影位置とは、撮影の座標系の位置、及び姿勢のことをいう。 |
The imaging position refers to the position and orientation of an imaging coordinate system. |
The imaging position refers to the position and orientation of an imaging coordinate system. |
18 |
撮影の光学系において発生する歪みを補正するためのアルゴリズムを実装する。 |
To mount an algorithm for correcting distortion generated in a photographing optical system. |
Implements an algorithm for correcting distortion generated in the imaging optical system. |
19 |
撮影の過程で取得されたデータに基づいて、三次元モデルを再構築する方法。 |
To provide a method for reconstructing a three dimensional model on the basis of data acquired in a photographing process. |
A method for reconstructing a three-dimensional model based on data acquired during the imaging process. |
20 |
詳細を後述する画像処理アルゴリズムによって、ノイズを効果的に除去することが可能になる。 |
The noise can be effectively removed by an image processing algorithm which will be described in detail later. |
The noise can be effectively removed by an image processing algorithm which will be described in detail later. |
21 |
詳細を後述する新しい製造方法は、従来の方法と比較して製造コストを30%削減できる。 |
The new manufacturing method, which will be described in detail later, can reduce the manufacturing cost by 30% compared to the conventional method. |
The new manufacturing method, which will be described in detail later, can reduce the manufacturing cost by 30% compared to the conventional method. |
22 |
詳細を後述するセンサーネットワークシステムは、リアルタイムでデータを収集・分析することができる。 |
The sensor network system, which is described in detail below, can collect and analyze data in real time. |
The sensor network system, which will be described in detail later, can collect and analyze data in real time. |
23 |
本例示的実施形態の画像処理装置100は、高解像度センサー101及び信号処理回路102を含む。 |
The image processing apparatus 100 of the present exemplary embodiment includes a high-resolution sensor 101 and a signal processing circuit 102. |
The image processing apparatus 100 of the present exemplary embodiment includes a high-resolution sensor 101 and a signal processing circuit 102. |
24 |
図3は、本例示的実施形態の半導体装置200の断面構造を示す模式図である。 |
FIG. 3 is a schematic view showing a cross-sectional structure of the semiconductor device 200 of the present exemplary embodiment. |
FIG. 3 is a schematic diagram showing a cross-sectional structure of the semiconductor device 200 of the present exemplary embodiment. |
25 |
本例示的実施形態の制御方法は、従来技術と比較して処理速度が30%向上する。 |
The control method of the present exemplary embodiment improves the processing speed by 30% compared to the prior art. |
The control method of the present exemplary embodiment improves processing speed by 30% compared to the conventional technology. |
26 |
次に、本例示的実施形態の無線通信システム300の動作について詳細に説明する。 |
Next, the operation of the wireless communication system 300 of the present exemplary embodiment will be described in detail. |
Next, the operation of the wireless communication system 300 of the present exemplary embodiment will be described in detail. |
27 |
本例示的実施形態のロボットアーム400は、第1関節部410と第2関節部420を備え、360度回転可能である。 |
The robot arm 400 of the present exemplary embodiment includes a first joint portion 410 and a second joint portion 420 and is rotatable by 360 degrees. |
The robot arm 400 of the present exemplary embodiment includes a first joint portion 410 and a second joint portion 420 and is rotatable by 360 degrees. |
28 |
図5に示すように、本例示的実施形態のデータ処理装置500はクラウドサーバー501と接続されている。 |
As shown in FIG. 5, the data processing apparatus 500 of the present exemplary embodiment is connected to a cloud server 501. |
As shown in FIG. 5, the data processing apparatus 500 of the present exemplary embodiment is connected to a cloud server 501. |
29 |
しかしながら、欠陥61が含まれる場合でも、その占める領域は検査対象物60の僅か一部であり、両者の投影データ全体の類似度への影響は僅かである。 |
However, even when the defect 61 is included, the region occupied by the defect 61 is only a part of theinspection object 60 , and the influence of the defect 61 on the degree of similarity of the entire projection data of the two is small. |
However, even when the defect 61 is included, the region occupied by it is only a small part of the inspection object 60, and the influence on the similarity of the entire projection data of both is small. |
30 |
測定装置20は、検査対象物60の表面粗さを0.1μm単位で測定可能であり、得られたデータは制御ユニット30に送信される。 |
The measurement device 20 can measure the surface roughness of the inspection target 60 in units of 0.1 μm, and the obtained data is transmitted to the control unit 30. |
The measurement device 20 can measure the surface roughness of the inspection object 60 in units of 0.1 μm, and the obtained data is transmitted to the control unit 30. |
31 |
図2に示すように、センサー部41は検査対象物60の周囲に配置され、温度変化及び振動を検出するように構成されている。 |
As shown in FIG. 2, the sensor unit 41 is disposed around the inspection target 60 and is configured to detect a temperature change and vibration. |
As shown in FIG. 2, the sensor unit 41 is disposed around the inspection target 60 and is configured to detect temperature changes and vibration. |
32 |
本例示的実施形態では、照明装置50からの光が検査対象物60に照射され、反射光は画像センサー70によって受光され、プロセッサ80によって解析される。 |
In this exemplary embodiment, light from the illumination device 50 is shone onto the test object 60, and the reflected light is received by the image sensor 70 and analyzed by the processor 80. |
In this exemplary embodiment, light from the illumination device 50 is irradiated onto the inspection target 60, and the reflected light is received by the image sensor 70 and analyzed by the processor 80. |
33 |
2減らした欠陥の番号D45に対応するエリアでは、検出装置300によって測定された抵抗値R1が許容範囲を超えていることが判明した。 |
It is found that the resistance value D45 measured by the detection device 300 exceeds the allowable range in the area corresponding to the defect number R1 reduced by 2. |
It was found that the resistance value R1 measured by the detection device 300 exceeds the allowable range in the area corresponding to defect number D45 reduced by 2. |
34 |
プロセッサ50は、3減らした欠陥の座標P72を計算し、その情報を記憶部60に格納して後続の画像処理工程S12で参照する。 |
The processor 50 calculates the coordinates P72 of the defect reduced by 3, stores the information in the storage unit 60, and refers to the information in the subsequent image processing step S12. |
The processor 50 calculates the coordinates P72 of the defect reduced by 3, stores the information in the storage unit 60 for reference in the subsequent image processing step S12. |
35 |
5減らした欠陥の寸法W30が閾値T1以下である場合、制御ユニット400は該当するサンプルS20を良品として分類する。 |
If the size W30 of the defect reduced by 5 is equal to or less than the critical value T1, the control unit 400 classifies the corresponding sample S20 as a good product. |
If the dimension W30 of the defect reduced by 5 is equal to or less than the threshold T1, the control unit 400 classifies the corresponding sample S20 as a good product. |
36 |
図7に示すように、4減らした欠陥のコントラスト値C15を算出し、その値に基づいて検出感度パラメータP2を自動調整する。 |
As shown in FIG. 7, the contrast value C15 of the defect reduced by 4 is calculated, and the detection sensitivity parameter P2 is automatically adjusted based on the value. |
As shown in FIG. 7, the contrast value C15 of the defect reduced by 4 is calculated, and the detection sensitivity parameter P2 is automatically adjusted based on the value. |
37 |
10減らした欠陥のカテゴリがタイプB3に分類される場合、システム200は補正アルゴリズムA25を適用して画像データD10を再構成する。 |
If the category of the defect reduced by one is classified into the type B3, the system 200 applies the correction algorithm A25 to reconstruct the image datum D1. |
If the category of the defect reduced by 10 is classified into the type B3, the system 200 applies the correction algorithm A25 to reconstruct the image data D10. |
38 |
例えば、測定値を記録しておく。 |
For example, the measurement value is recorded. |
For example, the measurement values are recorded. |
39 |
システム起動前に、キャリブレーションデータを保存しておく。 |
Calibration data is stored before the system is started. |
Calibration data is stored before the system startup. |
40 |
各処理ステップにおいて、パラメータの上限値と下限値を設定しておく。 |
In each processing step, an upper limit value and a lower limit value of a parameter are set. |
In each processing step, upper and lower limit values of parameters are set. |
41 |
装置の初期化時に、デバイスIDをレジスタに登録しておく。 |
When the apparatus is initialized, a device ID is registered in a register. |
When the apparatus is initialized, a device ID is registered in a register. |
42 |
画像データを補正するために、式(2)を用いてノイズ成分を除去し、式(3)に基づいてコントラスト調整を行えばよい。 |
In order to correct the image data, the noise component may be removed using Expression (2), and the contrast adjustment may be performed based on Expression (3). |
In order to correct the image data, the noise component may be removed using Expression (2), and the contrast adjustment may be performed based on Expression (3). |
43 |
測定誤差を低減するために、センサー値S1からセンサー値S2を減算し、その結果に補正係数αを乗じればよい。 |
In order to reduce measurement errors, the sensor value S1 may be subtracted from the sensor value S2, and the result may be multiplied by the correction coefficient α. |
In order to reduce measurement errors, the sensor value S2 may be subtracted from the sensor value S1, and the result may be multiplied by the correction coefficient α. |
44 |
検出精度を向上させるために、閾値T1を用いて一次フィルタリングを実施し、その後閾値T2を用いて二次フィルタリングを適用すればよい。 |
In order to improve the detection accuracy, first order filtering may be performed using the thresholds T1, and then second order filtering may be applied using the thresholds T2. |
In order to improve the detection accuracy, first order filtering may be performed using the threshold T1, and then second order filtering may be applied using the threshold T2. |
45 |
測定装置100は制御ユニット110を含む。 |
The measuring device 100 comprises a control unit 110. |
The measuring device 100 comprises a control unit 110. |
46 |
制御ユニット110はセンサーからの信号を処理する。 |
The control unit 110 processes the signals from the sensors. |
The control unit 110 processes the signals from the sensors. |
47 |
情報処理システム200はデータベース250と通信する。 |
Information handling system 200 is in communication with database 250. |
Information processing system 200 communicates with database 250. |
48 |
データベース250は検査結果を保存する。 |
A database 250 stores the inspection result. |
The database 250 stores inspection results. |
49 |
検出モジュール300は複数のフィルタ回路320を備える。 |
The detection module 300 includes a plurality of filter circuits 320. |
The detection module 300 includes a plurality of filter circuits 320. |
50 |
フィルタ回路320はノイズ成分を除去するように構成されている。 |
The filter circuit 320 is configured to remove a noise component. |
The filter circuit 320 is configured to remove noise components. |
51 |
解析処理では、異常値(本例示的実施形態では電圧変動値)を検出し、その原因(本例示的実施形態では過負荷)を特定するアルゴリズムを実行する。 |
In the analysis process, an algorithm for detecting an abnormal value (a voltage fluctuation value in the present exemplary embodiment) and identifying the cause thereof (an overload in the present exemplary embodiment) is executed. |
In the analysis process, an algorithm is executed to detect abnormal values (voltage fluctuation values in this exemplary embodiment) and identify their causes (overload in this exemplary embodiment). |
52 |
本システムは、基準値(本例示的実施形態では50Hz)から偏差(本例示的実施形態では±2%)を検出したとき、警告信号(本例示的実施形態では黄色警告)または危険信号(本例示的実施形態では赤色警告)を出力する。 |
When the system detects a deviation (± ±2% in the exemplary embodiment) from a reference value (50Hz in the exemplary embodiment), it outputs a warning signal (yellow warning in the exemplary embodiment) or a danger signal (red warning in the exemplary embodiment). |
The system outputs a warning signal (yellow warning in this exemplary embodiment) or danger signal (red warning in this exemplary embodiment) when it detects a deviation (±2% in this exemplary embodiment) from the reference value (50Hz in this exemplary embodiment). |
53 |
画像処理装置は、明度(本例示的実施形態ではHSV色空間におけるV値)および彩度(本例示的実施形態ではHSV色空間におけるS値)を調整することで、検出精度(本例示的実施形態では欠陥検出率)を向上させる。 |
The image processing apparatus improves the detection accuracy (in the present exemplary embodiment, the defect detection rate) by adjusting the brightness (in the present exemplary embodiment, the V value in the HSV color space) and the saturation (in the present exemplary embodiment, the S value in the HSV color space). |
The image processing apparatus improves detection accuracy (defect detection rate in this exemplary embodiment) by adjusting brightness (V value in the HSV color space in this exemplary embodiment) and saturation (S value in the HSV color space in this exemplary embodiment). |
54 |
また、ステップS22では、自動モードで検査を実行する場合も手動モードで検査を実行する場合と同様に、検出閾値を設定する。 |
Further, in step S22, even when the inspection is performed in the automatic mode, the detection threshold value is set as in the case where the inspection is performed in the manual mode. |
In step S22, the detection threshold is set for automatic mode inspection in the same way as for manual mode inspection. |
55 |
また、ステップS35では、高温環境下で測定する場合も常温環境下で測定する場合と同様に、センサーの校正を実施する。 |
In addition, in Step S35, in a case where the measurement is performed under the high-temperature environment, the sensor is calibrated in the same manner as in the case where the measurement is performed under the normal-temperature environment. |
In step S35, sensor calibration is performed for measurements in high-temperature environments in the same way as for measurements in normal-temperature environments. |
56 |
また、ステップS47では、金属材料を検査する場合も樹脂材料を検査する場合と同様に、表面粗さパラメータを計算する。 |
In step S47, when a metal material is inspected, the surface roughness parameter is calculated in the same manner as when a resin material is inspected. |
In step S47, when a metal material is inspected, the surface roughness parameter is calculated in the same manner as when a resin material is inspected. |
57 |
温度が20℃以上30℃以下の環境では通常モードで動作し、温度が30℃より高く45℃以下の環境では省電力モードで動作する。 |
It operates in the normal mode in an environment where the temperature is 20 °C or more and 30 °C or less, and operates in the power saving mode in an environment where the temperature is higher than 30 °C and 45 °C or less. |
It operates in normal mode in environments where the temperature is 20°C or higher and 30°C or lower, and operates in power saving mode in environments where the temperature is higher than 30°C and 45°C or lower. |
58 |
粒子サイズが5μm以上10μm以下の場合はグループAに分類し、粒子サイズが10μmより大きく20μm以下の場合はグループBに分類する。 |
When the particle size is 5 μm or more and 10 μm or less, the particles are classified into group A, and when the particle size is more than 10 μm and 20 μm or less, the particles are classified into group B. |
When the particle size is 5μm or larger and 10μm or smaller, particles are classified into group A, and when the particle size is larger than 10μm and 20μm or smaller, particles are classified into group B. |
59 |
電圧が3.0V以上3.6V以下の範囲で正常動作し、電圧が3.6Vより大きく4.2V以下の範囲では過負荷保護機能が作動する。 |
When the voltage is in a range of 3. 0 V or more and 3. 6 V or less, normal operation is performed, and when the voltage is in a range of more than 3. 6 V and 4. 2 V or less, the over-load protection function is activated. |
Normal operation is performed when the voltage is in a range of 3.0V or higher and 3.6V or lower, and the overload protection function is activated when the voltage is in a range of higher than 3.6V and 4.2V or lower. |
60 |
命令を実行する算術論理演算部と、 第1のメインメモリのデータの一部と、所定容量以上の連続アドレスのデータアクセスで前記第1のメインメモリより広い帯域を有する第2のメインメモリのデータの一部を記憶するキャッシュメモリ、及び前記算術論理演算部からのメモリ要求に応答して前記キャッシュメモリ内のデータを読み出してメモリ要求元に応答するキャッシュ制御部を有するキャッシュユニットとを有し、 前記キャッシュメモリ内に記憶される前記第2のメインメモリのデータの前記第1のメインメモリのデータに対する容量の比率が、所定の比率以下に制限される、演算処理装置。 |
An arithmetic processing apparatus comprising: an arithmetic and logic unit that executes an instruction; and a cache unit including a cache memory that stores a part of data of a first main memory and a part of data of a second main memory having a band wider than that of the first main memory by data access of continuous addresses of a predetermined capacity or more, and a cache control unit that reads data in the cache memory in response to a memory request from the arithmetic and logic unit and responds to a memory request source. |
An arithmetic processing unit comprising: an arithmetic and logic part that executes an instruction; and a cache unit including a cache memory that stores a part of data of a first main memory and a part of data of a second main memory having a band wider than that of the first main memory by data access of continuous addresses of a predetermined capacity or more, and a cache control part that reads data in the cache memory in response to a memory request from the arithmetic and logic part and responds to a memory request source, wherein the ratio of the capacity of the second main memory data stored in the cache memory to the first main memory data is limited to a predetermined ratio or less. |